CS50N12 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced Trench Technology VD SS ID PD ( TC=25℃) which reduce the conduction loss, improve switching RD S(O N)Typ performance and enhance the avalanche energy. The transistor c.

CS50N06

CS50N065A3

CS50N065A4

CS50N065A8

CS50N20A0R

CS50N20A8R

CS50N20ANH

CS50N20ANR

CS50N20FA9R

CS5005S

CS5010-40

CS5010S

CS5012A

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts